SI3459BDV-T1-GE3, Trans MOSFET P-CH 60V 2.2A 6-Pin TSOP T/R

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Артикул: SI3459BDV-T1-GE3
Semiconductor - Discrete > Transistors > FET - MOSFETSi3 TrenchFET® Power MOSFETsVishay / Siliconix Si3 TrenchFET® Power MOSFETs are available in N-channel, P-channel, and N- and P-channel versions. These Si3 MOSFETs are also offered in different V GS and V DS ranges. Vishay / Siliconix Si3 TrenchFET Power MOSFETs operate in an enhancement mode and offer ultra-low R DS(ON) for high efficiency. The series incorporates Si technology and operates at a temperature range of -55°C to 150°C. Typical...
Основные
factory pack quantity: factory pack quantity:3000
manufacturer:Vishay
maximum operating temperature:+150 C
minimum operating temperature:-55 C
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Semiconductor - Discrete > Transistors > FET - MOSFETSi3 TrenchFET® Power MOSFETsVishay / Siliconix Si3 TrenchFET® Power MOSFETs are available in N-channel, P-channel, and N- and P-channel versions. These Si3 MOSFETs are also offered in different V GS and V DS ranges. Vishay / Siliconix Si3 TrenchFET Power MOSFETs operate in an enhancement mode and offer ultra-low R DS(ON) for high efficiency. The series incorporates Si technology and operates at a temperature range of -55°C to 150°C. Typical applications include load switches and DC to DC converters.
Основные
factory pack quantity: factory pack quantity:3000
manufacturer:Vishay
maximum operating temperature:+150 C
minimum operating temperature:-55 C
mounting style:SMD/SMT
product category:MOSFET
product type:MOSFET
series:SI3
subcategory:MOSFETs
packaging:Reel, Cut Tape, MouseReel
part # aliases:SI3459BDV-T1-BE3 SI3459BDV-GE3
Вес и габариты
package/case:TSOP-6
tradename:TrenchFET
pd - power dissipation:3.3 W
number of channels:1 Channel
technology:Si
configuration:Single
channel mode:Enhancement
id - continuous drain current:2.9 A
qg - gate charge:7.7 nC
rds on - drain-source resistance:216 mOhms
transistor polarity:P-Channel
transistor type:1 P-Channel
vds - drain-source breakdown voltage:60 V
vgs - gate-source voltage:-20 V, +20 V
vgs th - gate-source threshold voltage:3 V
typical turn-off delay time:18 ns
typical turn-on delay time:5 ns
fall time:10 ns
rise time:12 ns
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