Name: Si2387DS-T1-GE3, Dual P-Channel MOSFET, 3 A, 80 V, 3-Pin SOT-23
SKU: Si2387DS-T1-GE3

Основные
factory pack quantity: factory pack quantity:	3000
manufacturer:	Vishay
maximum operating temperature:	+150 C
minimum operating temperature:	-55 C

30 ₽

- +

Бонус: 0.6 !

Бонусная программа

Итого: 30 ₽

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► Купить Si2387DS-T1-GE3, Dual P-Channel MOSFET, 3 A, 80 V, 3-Pin SOT-23 в интернет-магазине ООО «Телеметрия».

■ Категория: Транзисторы полевые (FETs, MOSFETs)

★ Цена: 30 руб.

Почему выбирают нас:

☎ Заказать: +7 (929) 433-44-45

Основные
factory pack quantity: factory pack quantity:	3000
manufacturer:	Vishay
maximum operating temperature:	+150 C
minimum operating temperature:	-55 C
mounting style:	SMD/SMT
product category:	MOSFET
product type:	MOSFET
subcategory:	MOSFETs
packaging:	Reel, Cut Tape, MouseReel
Вес и габариты
package/case:	SOT-23-3
tradename:	TrenchFET
pd - power dissipation:	2.5 W
number of channels:	1 Channel
technology:	Si
configuration:	Single
channel mode:	Enhancement
id - continuous drain current:	3 A
qg - gate charge:	10.2 nC
rds on - drain-source resistance:	242 mOhms
transistor polarity:	P-Channel
transistor type:	1 P-Channel
vds - drain-source breakdown voltage:	80 V
vgs - gate-source voltage:	-20 V, +20 V
vgs th - gate-source threshold voltage:	2.5 V
typical turn-off delay time:	44 ns
typical turn-on delay time:	50 ns
fall time:	30 ns
rise time:	40 ns

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Si2387DS-T1-GE3, Dual P-Channel MOSFET, 3 A, 80 V, 3-Pin SOT-23