SI2343DS-T1-GE3, MOSFET 30V 4.0A 1.25W 53mohm @ 10V

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Артикул: SI2343DS-T1-GE3
Semiconductors\Discrete Semiconductors\Transistors\MOSFETSI2 Series TrenchFET® Power MOSFETs Vishay SI2 Series TrenchFET® Power MOSFETs are N-channel MOSFETs designed with 30V V (ds) and are 100% tested gate resistance(R g ). These MOSFETs have gate resistance tested for 1MHz frequency with 0.2Ω to 1.4Ω. These SI2 series MOSFETs operate from -55 C to 150 C junction and storage temperature. The SI2 series are ideal for DC/DC converter, Load switch, and power management.
Основные
вес, г0.01
factory pack quantity: factory pack quantity:3000
manufacturer:Vishay
maximum operating temperature:+150 C
330
+
Бонус: 6.6 !
Бонусная программа
Итого: 330
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Semiconductors\Discrete Semiconductors\Transistors\MOSFETSI2 Series TrenchFET® Power MOSFETs Vishay SI2 Series TrenchFET® Power MOSFETs are N-channel MOSFETs designed with 30V V (ds) and are 100% tested gate resistance(R g ). These MOSFETs have gate resistance tested for 1MHz frequency with 0.2Ω to 1.4Ω. These SI2 series MOSFETs operate from -55 C to 150 C junction and storage temperature. The SI2 series are ideal for DC/DC converter, Load switch, and power management.
Основные
вес, г0.01
factory pack quantity: factory pack quantity:3000
manufacturer:Vishay
maximum operating temperature:+150 C
minimum operating temperature:-55 C
mounting style:SMD/SMT
product category:MOSFET
product type:MOSFET
series:SI2
subcategory:MOSFETs
packaging:Reel, Cut Tape, MouseReel
part # aliases:SI2343DS-GE3
Вес и габариты
package/case:TO-236-3
tradename:TrenchFET
pd - power dissipation:750 mW
number of channels:1 Channel
technology:Si
configuration:Single
channel mode:Enhancement
id - continuous drain current:3.1 A
qg - gate charge:14 nC
rds on - drain-source resistance:53 mOhms
transistor polarity:P-Channel
transistor type:1 P-Channel
vds - drain-source breakdown voltage:30 V
vgs - gate-source voltage:-20 V, +20 V
vgs th - gate-source threshold voltage:3 V
typical turn-off delay time:31 ns
typical turn-on delay time:10 ns
forward transconductance - min:10 S
fall time:20 ns
rise time:15 ns
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