SI2333DS-T1-E3

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Основные
pin count3
packagingTape and Reel
product categoryPower MOSFET
automotiveNo
160
+
Бонус: 3.2 !
Бонусная программа
Итого: 160
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Основные
pin count3
packagingTape and Reel
product categoryPower MOSFET
automotiveNo
eu rohsCompliant
lead shapeGull-wing
maximum operating temperature (°c)150
mountingSurface Mount
part statusNRND
pcb changed3
standard package nameSOT
supplier packageSOT-23
eccn (us)EAR99
maximum power dissipation (mw)1250
minimum operating temperature (°c)-55
configurationSingle
hts8541.29.00.95
package height1.02(Max)
package length3.04(Max)
package width1.4(Max)
process technologyTrenchFET
Вес и габариты
number of elements per chip1
channel typeP
channel modeEnhancement
maximum continuous drain current (a)4.1
maximum drain source resistance (mohm)32@4.5V
maximum drain source voltage (v)12
maximum gate source leakage current (na)100
maximum gate source voltage (v)±8
maximum gate threshold voltage (v)1
maximum idss (ua)1
typical fall time (ns)60
typical gate charge @ vgs (nc)11.5@4.5V
typical input capacitance @ vds (pf)1100@6V
typical rise time (ns)45
typical turn-off delay time (ns)72
typical turn-on delay time (ns)25
militaryNo
operating junction temperature (°c)-55 to 150
typical output capacitance (pf)390
maximum continuous drain current on pcb @ tc=25°c (a)5.3
maximum diode forward voltage (v)1.2
maximum junction ambient thermal resistance on pcb (°c/w)166
maximum positive gate source voltage (v)8
maximum power dissipation on pcb @ tc=25°c (w)1.25
maximum pulsed drain current @ tc=25°c (a)20
minimum gate threshold voltage (v)0.4
typical diode forward voltage (v)0.7
typical gate plateau voltage (v)1.4
typical gate to drain charge (nc)3.2
typical gate to source charge (nc)1.5
typical reverse transfer capacitance @ vds (pf)300@6V
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