SI2333CDS-T1-E3
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Semiconductors\Discrete Semiconductors\Transistors\MOSFETTrans MOSFET P-CH 12V 7.1A 3-Pin SOT-23 T/R
| Основные | |
| вес, г | 0.01 |
| package / case | SOT-23-3 |
| minimum operating temperature | -55 C |
| pin count | 3 |
| factory pack quantity | 3000 |
| manufacturer | Vishay |
| maximum operating temperature | +150 C |
| mounting style | SMD/SMT |
| packaging | Cut Tape or Reel |
| product category | MOSFET |
| product type | MOSFET |
| series | SI2 |
| subcategory | MOSFETs |
| automotive | No |
| eu rohs | compliant |
| lead shape | Gull-wing |
| maximum operating temperature (°c) | 150 |
| mounting | surface mount |
| part status | NRND |
| pcb changed | 3 |
| ppap | No |
| standard package name | SOT |
| supplier package | SOT-23 |
| eccn (us) | ear99 |
| maximum power dissipation (mw) | 1250 |
| minimum operating temperature (°c) | -55 |
| configuration | Single |
| fall time | 12 ns |
| rise time | 35 ns |
| number of channels | 1 Channel |
| process technology | TrenchFET |
| Вес и габариты | |
| tradename | TrenchFET |
| number of elements per chip | 1 |
| channel type | P |
| part # aliases | SI2333CDS-E3 |
| technology | Si |
| pd - power dissipation | 2.5 W |
| channel mode | Enhancement |
| maximum continuous drain current (a) | 7.1 |
| maximum drain source resistance (mohm) | 35 4.5V |
| maximum drain source voltage (v) | 12 |
| maximum gate source voltage (v) | ±8 |
| maximum gate threshold voltage (v) | 1 |
| typical fall time (ns) | 12 |
| typical gate charge @ vgs (nc) | 15 4.5V|9 2.5V |
| typical input capacitance @ vds (pf) | 1225 6V |
| typical rise time (ns) | 35 |
| typical turn-off delay time (ns) | 45 |
| typical turn-on delay time (ns) | 13 |
| rds on - drain-source resistance | 35 mOhms |
| transistor polarity | P-Channel |
| vds - drain-source breakdown voltage | 12 V |
| vgs - gate-source voltage | 4.5 V |
| id - continuous drain current | 7.1 A |
| typical turn-on delay time | 13 ns |
| typical turn-off delay time | 45 ns |
| forward transconductance - min | 18.5 S |
| qg - gate charge | 15 nC |
| transistor type | 1 P-Channel |
| vgs th - gate-source threshold voltage | 400 mV |
| typical output capacitance (pf) | 315 |
| typical gate to drain charge (nc) | 3.8 |
| typical gate to source charge (nc) | 1.9 |
| typical reverse recovery charge (nc) | 20 |
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Компания ООО "Телеметрия"
- Название организации: ООО "ТЕЛЕМЕТРИЯ" Юридический адрес организации: Российская Федерация, 664043, Иркутская область, г. Иркутск, ул. Маршала Конева, дом 38 ИНН 7536172565 КПП 381201001 ОГРН 1187536004215 Расчетный счет 40702810010000426573 Банк АО «Тинькофф Банк» БИК банка 044525974 ИНН банка 7710140679 Корреспондентский счет банка 30101810145250000974 Юридический адрес банка 127287, г. Москва, ул. Хуторская 2-я, д. 38А, стр. 26
