SI2319DS-T1-E3, Силовой МОП-транзистор, P Канал, 40 В, 3 А, 0.065 Ом, TO-236, Surface Mount

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Артикул: SI2319DS-T1-E3
Trans MOSFET P-CH 40V 2.3A 3-Pin SOT-23 T/R
Основные
вес, г2
pin count3
packagingTape and Reel
product categoryPower MOSFET
160
+
Бонус: 3.2 !
Бонусная программа
Итого: 160
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Trans MOSFET P-CH 40V 2.3A 3-Pin SOT-23 T/R
Основные
вес, г2
pin count3
packagingTape and Reel
product categoryPower MOSFET
automotiveNo
eu rohsCompliant
lead shapeGull-wing
maximum operating temperature (°c)150
mountingSurface Mount
part statusNRND
pcb changed3
ppapNo
standard package nameSOT
supplier packageSOT-23
eccn (us)EAR99
maximum power dissipation (mw)1250
minimum operating temperature (°c)-55
configurationSingle
process technologyTrenchFET
Вес и габариты
number of elements per chip1
channel typeP
channel modeEnhancement
maximum continuous drain current (a)2.3
maximum drain source resistance (mohm)82 10V
maximum drain source voltage (v)40
maximum gate source voltage (v)±20
maximum gate threshold voltage (v)3
typical fall time (ns)25
typical gate charge @ 10v (nc)11.3
typical gate charge @ vgs (nc)11.3 10V
typical input capacitance @ vds (pf)470 20V
typical rise time (ns)15
typical turn-off delay time (ns)25
typical turn-on delay time (ns)7
typical output capacitance (pf)85
typical gate to drain charge (nc)3.3
typical gate to source charge (nc)1.7
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