Semiconductor - Discrete > Transistors > FET - MOSFET N-канальный МОП-транзистор, от 30 до 50 В, Vishay Semiconductor

Подробное описание

Основные
mounting type	Surface Mount
length	3.04mm
package type	SOT-23
minimum operating temperature	-55 °C

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Semiconductor - Discrete > Transistors > FET - MOSFET N-канальный МОП-транзистор, от 30 до 50 В, Vishay Semiconductor

Основные
mounting type	Surface Mount
length	3.04mm
package type	SOT-23
minimum operating temperature	-55 °C
width	1.4mm
pin count	3
maximum operating temperature	+150 °C
height	1.02mm
Вес и габариты
number of elements per chip	1
channel type	N
transistor configuration	Single
maximum drain source voltage	40 V
maximum gate source voltage	-20 V, +20 V
maximum continuous drain current	5.6 A
transistor material	Si
maximum drain source resistance	51 mΩ
channel mode	Enhancement
minimum gate threshold voltage	1.2V
continuous drain current (id) @ 25°c	5.6A
power dissipation-max (ta=25°c)	1.25W
rds on - drain-source resistance	42mΩ 4.3A, 10V
transistor polarity	N Channel
vds - drain-source breakdown voltage	40V
vgs - gate-source voltage	2.5V 250uA
maximum power dissipation	2.1 W
typical gate charge @ vgs	5.8 nC @ 10 V

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