SI2304DDS-T1-GE3, Силовой МОП-транзистор, N Канал, 30 В, 3.6 А, 0.049 Ом, TO-236, Surface Mount

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Артикул: SI2304DDS-T1-GE3
Основные
вес, г0.05
pin count3
packagingTape and Reel
product categoryPower MOSFET
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Основные
вес, г0.05
pin count3
packagingTape and Reel
product categoryPower MOSFET
automotiveNo
eu rohsCompliant
lead shapeGull-wing
maximum operating temperature (°c)150
mountingSurface Mount
part statusActive
pcb changed3
standard package nameSOT-23
supplier packageSOT-23
eccn (us)EAR99
maximum power dissipation (mw)1100
minimum operating temperature (°c)-55
configurationSingle
hts8541.29.00.95
package height1.02(Max)
package length3.04(Max)
package width1.4(Max)
process technologyTrenchFET
Вес и габариты
number of elements per chip1
channel typeN
channel modeEnhancement
maximum continuous drain current (a)3.3
maximum drain source resistance (mohm)60@10V
maximum drain source voltage (v)30
maximum gate source voltage (v)±20
typical fall time (ns)22
typical gate charge @ 10v (nc)4.5
typical gate charge @ vgs (nc)2.1@4.5V|4.5@10V
typical input capacitance @ vds (pf)235@15V
typical rise time (ns)50
typical turn-off delay time (ns)12
typical turn-on delay time (ns)12
militaryNo
rds on - drain-source resistance60mО© @ 3.2A,10V
transistor polarityN Channel
vds - drain-source breakdown voltage30V
vgs - gate-source voltage2.2V @ 250uA
continuous drain current (id) @ 25в°c3.3A
power dissipation-max (ta=25в°c)1.1W
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