Semiconductors\Discrete Semiconductors\Transistors\MOSFETP-канал 20 В, 3,1 А (Tc), 860 мВт (Ta), 1,6 Вт (Tc), поверхностный монтаж SOT-23-3 (TO-236)

Подробное описание

Основные
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Surface Mount
operating temperature	-55В°C ~ 150В°C (TJ)
package	Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®

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Semiconductors\Discrete Semiconductors\Transistors\MOSFETP-канал 20 В, 3,1 А (Tc), 860 мВт (Ta), 1,6 Вт (Tc), поверхностный монтаж SOT-23-3 (TO-236)

Основные
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Surface Mount
operating temperature	-55В°C ~ 150В°C (TJ)
package	Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
package / case	TO-236-3, SC-59, SOT-23-3
rohs status	ROHS3 Compliant
eccn	EAR99
htsus	8541.29.0095
supplier device package	SOT-23-3 (TO-236)
series	TrenchFETВ® ->
base product number	SI2301 ->
Вес и габариты
technology	MOSFET (Metal Oxide)
current - continuous drain (id) @ 25в°c	3.1A (Tc)
drain to source voltage (vdss)	20V
drive voltage (max rds on, min rds on)	2.5V, 4.5V
fet type	P-Channel
gate charge (qg) (max) @ vgs	10nC @ 4.5V
input capacitance (ciss) (max) @ vds	405pF @ 10V
power dissipation (max)	860mW (Ta), 1.6W (Tc)
rds on (max) @ id, vgs	112mOhm @ 2.8A, 4.5V
vgs (max)	В±8V
vgs(th) (max) @ id	1V @ 250ВµA
rds on - drain-source resistance	112mО© @ 2.8A,4.5V
transistor polarity	P Channel
vds - drain-source breakdown voltage	20V
vgs - gate-source voltage	1V @ 250uA
continuous drain current (id) @ 25в°c	3.1A(Tc)
power dissipation-max (ta=25в°c)	1.6W(Tc)

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SI2301CDS-T1-E3