Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал 20V 2.1A (Tj) 200 мВт поверхностный монтаж SOT-323

Подробное описание

Вес и габариты
current - continuous drain (id) @ 25в°c	2.1A (Tj)
drain to source voltage (vdss)	20V
drive voltage (max rds on, min rds on)	2.5V, 4.5V

95 ₽

– +

Бонус: 1.9 !

Бонусная программа

Итого: 95 ₽

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Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал 20V 2.1A (Tj) 200 мВт поверхностный монтаж SOT-323

Вес и габариты
current - continuous drain (id) @ 25в°c	2.1A (Tj)
drain to source voltage (vdss)	20V
drive voltage (max rds on, min rds on)	2.5V, 4.5V
eccn	EAR99
fet type	N-Channel
gate charge (qg) (max) @ vgs	10nC @ 4.5V
htsus	8541.21.0095
input capacitance (ciss) (max) @ vds	300pF @ 10V
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Surface Mount
operating temperature	-55В°C ~ 150В°C (TJ)
package	Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
package / case	SC-70, SOT-323
power dissipation (max)	200mW
rds on (max) @ id, vgs	60mOhm @ 3.6A, 4.5V
rohs status	ROHS3 Compliant
supplier device package	SOT-323
technology	MOSFET (Metal Oxide)
vgs (max)	В±8V
vgs(th) (max) @ id	1.2V @ 50ВµA

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SI2102-TP