SCT30N120, Silicon Carbide MOSFET, Single, N Channel, 40 А, 1.2 кВ, 0.08 Ом, HiP247
В избранноеВ сравнение
- Обзор
- Характеристики
- Отзывы (0)
- Реквизиты
Полупроводники - Дискретные\МОП-транзисторы\МОП-Транзисторы и Модули на Основе Карбида Кремния (SiC)The SCT30N120 is a N-channel silicon carbide Power MOSFET, unsurpassed on-resistance per unit area and very good switching performance independent of temperature. Suitable for high efficiency and high power density applications.
• Very tight variation of on-resistance vs. temperature• Slight variation of switching losses vs. temperature• Very high operating temperature capability (200°C)• Very fast and robust intrinsic body diode• Low capacitance
• Very tight variation of on-resistance vs. temperature• Slight variation of switching losses vs. temperature• Very high operating temperature capability (200°C)• Very fast and robust intrinsic body diode• Low capacitance
Отзывов нет
![NCE3050, Транзистор MOSFET N-канал 30V 50A [TO-220]](/wa-data/public/shop/products/34/17/211734/images/243267/243267.300x0.jpg "NCE3050, Транзистор MOSFET N-канал 30V 50A [TO-220]")
![Транзистор КТ826Б \NPN\15\КТ-9\; транз КТ826Б \NPN\15\КТ-9\](/wa-data/public/shop/products/96/23/292396/images/337119/337119.300x0.jpg "Транзистор КТ826Б \NPN\15\КТ-9\; транз КТ826Б \NPN\15\КТ-9\")
![KBP210 (RS207), Диодный мост 2А 1000В [KBP]](/wa-data/public/shop/products/33/37/123733/images/155187/155187.300x0.jpg "KBP210 (RS207), Диодный мост 2А 1000В [KBP]")
