SCT30N120, Silicon Carbide MOSFET, Single, N Channel, 40 А, 1.2 кВ, 0.08 Ом, HiP247
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Полупроводники - Дискретные\МОП-транзисторы\МОП-Транзисторы и Модули на Основе Карбида Кремния (SiC)The SCT30N120 is a N-channel silicon carbide Power MOSFET, unsurpassed on-resistance per unit area and very good switching performance independent of temperature. Suitable for high efficiency and high power density applications.
• Very tight variation of on-resistance vs. temperature• Slight variation of switching losses vs. temperature• Very high operating temperature capability (200°C)• Very fast and robust intrinsic body diode• Low capacitance
• Very tight variation of on-resistance vs. temperature• Slight variation of switching losses vs. temperature• Very high operating temperature capability (200°C)• Very fast and robust intrinsic body diode• Low capacitance
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