SCT30N120, N-Channel MOSFET, 45 A, 1200 V, 3-Pin HiP247 SCT30N120
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MOSFETsThe SCT30N120 is a N-channel silicon carbide Power MOSFET, unsurpassed on-resistance per unit area and very good switching performance independent of temperature. Suitable for high efficiency and high power density applications.
• Very tight variation of on-resistance vs. temperature• Slight variation of switching losses vs. temperature• Very high operating temperature capability (200°C)• Very fast and robust intrinsic body diode• Low capacitance
• Very tight variation of on-resistance vs. temperature• Slight variation of switching losses vs. temperature• Very high operating temperature capability (200°C)• Very fast and robust intrinsic body diode• Low capacitance
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