Name: SCT3030ARC14, SiC N-Channel MOSFET, 70 A, 650 V, 4-Pin TO-247-4 SCT3030ARC14
SKU: SCT3030ARC14

N-канал 650V 70A (Tc) 262W сквозное отверстие TO-247-4L

Подробное описание

Вес и габариты
base product number	SCT3030 ->
current - continuous drain (id) @ 25в°c	70A (Tc)
drain to source voltage (vdss)	650V

11 440 ₽

– +

Бонус: 228.8 !

Бонусная программа

Итого: 11 440 ₽

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N-канал 650V 70A (Tc) 262W сквозное отверстие TO-247-4L

Вес и габариты
base product number	SCT3030 ->
current - continuous drain (id) @ 25в°c	70A (Tc)
drain to source voltage (vdss)	650V
drive voltage (max rds on, min rds on)	18V
eccn	EAR99
fet type	N-Channel
gate charge (qg) (max) @ vgs	104nC @ 18V
htsus	8541.29.0095
input capacitance (ciss) (max) @ vds	1526pF @ 500V
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Through Hole
operating temperature	175В°C (TJ)
package	Tube
package / case	TO-247-4
power dissipation (max)	262W
rds on (max) @ id, vgs	39mOhm @ 27A, 18V
rohs status	ROHS3 Compliant
supplier device package	TO-247-4L
technology	SiCFET (Silicon Carbide)
vgs (max)	+22V, -4V
vgs(th) (max) @ id	5.6V @ 13.3mA

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