Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал 50 В 200 мА (Ta) 350 мВт (Tc) поверхностный монтаж SST3

Подробное описание

Вес и габариты
base product number	RYC002 ->
current - continuous drain (id) @ 25в°c	200mA (Ta)
drain to source voltage (vdss)	50V

21 ₽

– +

Бонус: 0.42 !

Бонусная программа

Итого: 21 ₽

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Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал 50 В 200 мА (Ta) 350 мВт (Tc) поверхностный монтаж SST3

Вес и габариты
base product number	RYC002 ->
current - continuous drain (id) @ 25в°c	200mA (Ta)
drain to source voltage (vdss)	50V
drive voltage (max rds on, min rds on)	4.5V
eccn	EAR99
fet type	N-Channel
htsus	8541.21.0095
input capacitance (ciss) (max) @ vds	26pF @ 10V
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Surface Mount
operating temperature	-55В°C ~ 150В°C (TJ)
other related documents	http://rohmfs.rohm.com/en/techdata_basic/transisto
package	Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
package / case	TO-236-3, SC-59, SOT-23-3
power dissipation (max)	350mW (Tc)
rds on (max) @ id, vgs	2.2Ohm @ 200mA, 4.5V
reach status	REACH Unaffected
rohs status	ROHS3 Compliant
simulation models	http://rohmfs.rohm.com/en/products/library/spice/d
supplier device package	SST3
technology	MOSFET (Metal Oxide)
vgs (max)	В±8V
vgs(th) (max) @ id	800mV @ 1mA

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RYC002N05T316