N-канал 20 В 200 мА (Ta) 150 мВт (Ta) Поверхностный монтаж EMT3

Подробное описание

Вес и габариты
base product number	RUE002 ->
continuous drain current (id) @ 25в°c	200mA
current - continuous drain (id) @ 25в°c	200mA (Ta)

160 ₽

– +

Бонус: 3.2 !

Бонусная программа

Итого: 160 ₽

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N-канал 20 В 200 мА (Ta) 150 мВт (Ta) Поверхностный монтаж EMT3

Вес и габариты
base product number	RUE002 ->
continuous drain current (id) @ 25в°c	200mA
current - continuous drain (id) @ 25в°c	200mA (Ta)
drain to source voltage (vdss)	20V
drive voltage (max rds on, min rds on)	1.2V, 2.5V
eccn	EAR99
fet type	N-Channel
htsus	8541.21.0095
input capacitance (ciss) (max) @ vds	25pF @ 10V
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Surface Mount
operating temperature	150В°C (TJ)
package	Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
package / case	SC-75, SOT-416
power dissipation (max)	150mW (Ta)
power dissipation-max (ta=25в°c)	150mW
rds on - drain-source resistance	1.2О© @ 200mA,2.5V
rds on (max) @ id, vgs	1.2Ohm @ 200mA, 2.5V
reach status	REACH Unaffected
rohs status	ROHS3 Compliant
supplier device package	EMT3
technology	MOSFET (Metal Oxide)
transistor polarity	N Channel
vds - drain-source breakdown voltage	20V
vgs - gate-source voltage	1V @ 1mA
vgs (max)	В±8V
vgs(th) (max) @ id	1V @ 1mA

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Кнопки

RUE002N02TL