Канал P 20 В 200 мА (Ta) 150 мВт (Ta) Поверхностный монтаж UMT3F

Подробное описание

Вес и габариты
base product number	RU1C002 ->
current - continuous drain (id) @ 25в°c	200mA (Ta)
drain to source voltage (vdss)	20V

17 ₽

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Канал P 20 В 200 мА (Ta) 150 мВт (Ta) Поверхностный монтаж UMT3F

Вес и габариты
base product number	RU1C002 ->
current - continuous drain (id) @ 25в°c	200mA (Ta)
drain to source voltage (vdss)	20V
drive voltage (max rds on, min rds on)	1.2V, 4.5V
eccn	EAR99
fet type	P-Channel
gate charge (qg) (max) @ vgs	1.4nC @ 4.5V
htsus	8541.21.0095
input capacitance (ciss) (max) @ vds	115pF @ 10V
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Surface Mount
operating temperature	150В°C (TJ)
other related documents	http://rohmfs.rohm.com/en/techdata_basic/transisto
package	Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
package / case	SC-85
power dissipation (max)	150mW (Ta)
rds on (max) @ id, vgs	1.2Ohm @ 200mA, 4.5V
reach status	REACH Unaffected
rohs status	ROHS3 Compliant
simulation models	http://rohmfs.rohm.com/en/products/library/spice/d
supplier device package	UMT3F
technology	MOSFET (Metal Oxide)
vgs (max)	В±10V
vgs(th) (max) @ id	1V @ 100ВµA

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