RTR025P02TL
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Semiconductors\Discrete Semiconductors\Transistors\MOSFET
| Вес и габариты | |
| channel mode | Enhancement |
| channel mode: | Enhancement |
| configuration | Single |
| configuration: | Single |
| factory pack quantity | 3000 |
| factory pack quantity: factory pack quantity: | 3000 |
| fall time | 20 ns |
| fall time: | 20 ns |
| height | 0.85 mm |
| id - continuous drain current | 2.5 A |
| id - continuous drain current: | 2.5 A |
| length | 2.9 mm |
| manufacturer | ROHM Semiconductor |
| manufacturer: | ROHM Semiconductor |
| maximum operating temperature | + 150 C |
| maximum operating temperature: | +150 C |
| minimum operating temperature | - 55 C |
| minimum operating temperature: | -55 C |
| mounting style | SMD/SMT |
| mounting style: | SMD/SMT |
| number of channels | 1 Channel |
| number of channels: | 1 Channel |
| package / case | SOT-346T-3 |
| package/case: | SOT-346T-3 |
| packaging | Cut Tape or Reel |
| packaging: | Reel, Cut Tape, MouseReel |
| part # aliases | RTR025P02 |
| part # aliases: | RTR025P02 |
| pd - power dissipation | 1 W |
| pd - power dissipation: | 1 W |
| product category | MOSFET |
| product category: | MOSFET |
| product type | MOSFET |
| product type: | MOSFET |
| qg - gate charge: | 7 nC |
| rds on - drain-source resistance | 115 mOhms |
| rds on - drain-source resistance: | 115 mOhms |
| rise time | 18 ns |
| rise time: | 18 ns |
| series | RTR025P02 |
| series: | RTR025P02 |
| subcategory | MOSFETs |
| subcategory: | MOSFETs |
| technology | Si |
| technology: | Si |
| transistor polarity | P-Channel |
| transistor polarity: | P-Channel |
| transistor type | 1 P-Channel |
| transistor type: | 1 P-Channel |
| type | MOSFET |
| type: | MOSFET |
| typical turn-off delay time | 50 ns |
| typical turn-off delay time: | 50 ns |
| typical turn-on delay time | 12 ns |
| typical turn-on delay time: | 12 ns |
| vds - drain-source breakdown voltage | 20 V |
| vds - drain-source breakdown voltage: | 20 V |
| vgs - gate-source voltage | 12 V |
| vgs - gate-source voltage: | -12 V, +12 V |
| vgs th - gate-source threshold voltage: | 2 V |
| width | 1.6 mm |
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Компания ООО "Телеметрия"
- Название организации: ООО "ТЕЛЕМЕТРИЯ" Юридический адрес организации: Российская Федерация, 664043, Иркутская область, г. Иркутск, ул. Маршала Конева, дом 38 ИНН 7536172565 КПП 381201001 ОГРН 1187536004215 Расчетный счет 40702810010000426573 Банк АО «Тинькофф Банк» БИК банка 044525974 ИНН банка 7710140679 Корреспондентский счет банка 30101810145250000974 Юридический адрес банка 127287, г. Москва, ул. Хуторская 2-я, д. 38А, стр. 26