Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал 30 В 3,5 А (Ta) 1,25 Вт (Ta) Монтаж на поверхность TSMT6 (SC-95)

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130 ₽

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Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал 30 В 3,5 А (Ta) 1,25 Вт (Ta) Монтаж на поверхность TSMT6 (SC-95)

Вес и габариты
base product number	RTQ035 ->
channel mode	Enhancement
configuration	Single
current - continuous drain (id) @ 25в°c	3.5A (Ta)
drain to source voltage (vdss)	30V
drive voltage (max rds on, min rds on)	2.5V, 4.5V
eccn	EAR99
factory pack quantity	3000
fall time	12 ns
fet type	N-Channel
gate charge (qg) (max) @ vgs	6.4nC @ 4.5V
htsus	8541.29.0095
id - continuous drain current	3.5 A
input capacitance (ciss) (max) @ vds	285pF @ 10V
manufacturer	ROHM Semiconductor
maximum operating temperature	+150 C
minimum operating temperature	-55 C
moisture sensitivity level (msl)	1 (Unlimited)
mounting style	SMD/SMT
mounting type	Surface Mount
number of channels	1 Channel
operating temperature	150В°C (TJ)
package	Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
package / case	SOT-23-6 Thin, TSOT-23-6
packaging	Cut Tape or Reel
part # aliases	RTQ035N03
pd - power dissipation	1.25 W
power dissipation (max)	1.25W (Ta)
product	MOSFET Small Signal
product category	MOSFET
product type	MOSFET
rds on - drain-source resistance	38 mOhms
rds on (max) @ id, vgs	54mOhm @ 3.5A, 4.5V
reach status	REACH Unaffected
rise time	12 ns
rohs status	ROHS3 Compliant
series	RTQ035N03
subcategory	MOSFETs
supplier device package	TSMT6 (SC-95)
technology	MOSFET (Metal Oxide)
transistor polarity	N-Channel
transistor type	1 N-Channel
type	MOSFET
typical turn-off delay time	29 ns
typical turn-on delay time	8 ns
vds - drain-source breakdown voltage	30 V
vgs - gate-source voltage	12 V
vgs (max)	12V
vgs(th) (max) @ id	1.5V @ 1mA

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Кнопки

RTQ035N03TR