Semiconductors\Discrete Semiconductors\Transistors\MOSFETSilicon Power MOSFETsROHM Semiconductor Silicon Power MOSFETs feature ultra-fast switching speeds and low on-resistance. These MOSFETs are available in a wide lineup of packages, including the miniature 0604 size to save space in various designs.

Подробное описание

Вес и габариты
base product number	RTF025 ->
channel mode:	Enhancement
configuration:	Single

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220 ₽

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Бонус: 4.4 !

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Итого: 220 ₽

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Вес и габариты
base product number	RTF025 ->
channel mode:	Enhancement
configuration:	Single
current - continuous drain (id) @ 25в°c	2.5A (Ta)
drain to source voltage (vdss)	30V
drive voltage (max rds on, min rds on)	2.5V, 4.5V
eccn	EAR99
factory pack quantity: factory pack quantity:	3000
fall time:	15 ns
fet type	N-Channel
gate charge (qg) (max) @ vgs	5.2nC @ 4.5V
htsus	8541.21.0095
id - continuous drain current:	2.5 A
input capacitance (ciss) (max) @ vds	270pF @ 10V
manufacturer:	ROHM Semiconductor
maximum operating temperature:	+150 C
minimum operating temperature:	-55 C
moisture sensitivity level (msl)	1 (Unlimited)
mounting style:	SMD/SMT
mounting type	Surface Mount
number of channels:	1 Channel
operating temperature	150В°C (TJ)
other related documents	http://rohmfs.rohm.com/en/techdata_basic/transisto
package	Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
package / case	3-SMD, Flat Lead
package/case:	SOT-323-3
packaging:	Reel, Cut Tape, MouseReel
part # aliases:	RTF025N03
pd - power dissipation:	800 mW
power dissipation (max)	800mW (Ta)
product:	MOSFET Small Signal
product category:	MOSFET
product type:	MOSFET
qg - gate charge:	5.2 nC
rds on - drain-source resistance:	48 mOhms
rds on (max) @ id, vgs	67mOhm @ 2.5A, 4.5V
reach status	REACH Unaffected
rise time:	15 ns
rohs status	ROHS3 Compliant
series:	RTF025N03
simulation models	http://rohmfs.rohm.com/en/products/library/spice/d
subcategory:	MOSFETs
supplier device package	TUMT3
technology	MOSFET (Metal Oxide)
technology:	Si
transistor polarity:	N-Channel
transistor type:	1 N-Channel
type:	MOSFET
typical turn-off delay time:	27 ns
typical turn-on delay time:	8 ns
vds - drain-source breakdown voltage:	30 V
вес, г	0.01
vgs - gate-source voltage:	-12 V, +12 V
vgs (max)	12V
vgs th - gate-source threshold voltage:	500 mV
vgs(th) (max) @ id	1.5V @ 1mA

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Название организации: ООО "ТЕЛЕМЕТРИЯ"
Юридический адрес организации: Российская Федерация, 664043, Иркутская область, г. Иркутск, ул. Маршала Конева, дом 38
ИНН 7536172565
КПП 381201001
ОГРН 1187536004215
Расчетный счет 40702810010000426573
Банк АО «Тинькофф Банк»
БИК банка 044525974
ИНН банка 7710140679
Корреспондентский счет банка 30101810145250000974
Юридический адрес банка 127287, г. Москва, ул. Хуторская 2-я, д. 38А, стр. 26

Кнопки

RTF025N03TL, MOSFET N-CH 30V 1.4A TUMT3