Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleP-канал 20V 1A (Ta) 800 мВт (Ta) Поверхностный монтаж TUMT3

Подробное описание

Вес и габариты
base product number	RTF010 ->
current - continuous drain (id) @ 25в°c	1A (Ta)
drain to source voltage (vdss)	20V

230 ₽

– +

Бонус: 4.6 !

Бонусная программа

Итого: 230 ₽

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Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleP-канал 20V 1A (Ta) 800 мВт (Ta) Поверхностный монтаж TUMT3

Вес и габариты
base product number	RTF010 ->
current - continuous drain (id) @ 25в°c	1A (Ta)
drain to source voltage (vdss)	20V
drive voltage (max rds on, min rds on)	2.5V, 4.5V
eccn	EAR99
fet type	P-Channel
gate charge (qg) (max) @ vgs	2.1nC @ 4.5V
htsus	8541.21.0095
input capacitance (ciss) (max) @ vds	150pF @ 10V
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Surface Mount
operating temperature	150В°C (TJ)
package	Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
package / case	3-SMD, Flat Lead
power dissipation (max)	800mW (Ta)
rds on (max) @ id, vgs	390mOhm @ 1A, 4.5V
reach status	REACH Unaffected
rohs status	ROHS3 Compliant
supplier device package	TUMT3
technology	MOSFET (Metal Oxide)
vgs (max)	В±12V
vgs(th) (max) @ id	2V @ 1mA

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Кнопки

RTF010P02TL