Semiconductors\Discrete Semiconductors\Transistors\MOSFETP-канал 30 В 3,5 А (Ta) 1 Вт (Ta) Монтаж на поверхность TSMT3

Подробное описание

Вес и габариты
base product number	RQ5E035 ->
configuration	Single
current - continuous drain (id) @ 25в°c	3.5A (Ta)

42 ₽

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Semiconductors\Discrete Semiconductors\Transistors\MOSFETP-канал 30 В 3,5 А (Ta) 1 Вт (Ta) Монтаж на поверхность TSMT3

Вес и габариты
base product number	RQ5E035 ->
configuration	Single
current - continuous drain (id) @ 25в°c	3.5A (Ta)
drain to source voltage (vdss)	30V
drive voltage (max rds on, min rds on)	4.5V, 10V
eccn	EAR99
factory pack quantity	3000
fall time	20 ns
fet type	P-Channel
gate charge (qg) (max) @ vgs	10nC @ 10V
htsus	8541.29.0095
id - continuous drain current	3.5 A
input capacitance (ciss) (max) @ vds	475pF @ 15V
manufacturer	Rohm Semiconductor
moisture sensitivity level (msl)	1 (Unlimited)
mounting style	SMD/SMT
mounting type	Surface Mount
number of channels	1 Channel
operating temperature	150В°C (TJ)
other related documents	http://rohmfs.rohm.com/en/techdata_basic/transisto
package	Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
package / case	SOT-346-3
packaging	Cut Tape or Reel
part # aliases	RQ5E035AT
pd - power dissipation	1 W
power dissipation (max)	1W (Ta)
product category	MOSFET
product type	MOSFET
qg - gate charge	10 nC
rds on - drain-source resistance	38 mOhms
rds on (max) @ id, vgs	50mOhm @ 3.5A, 10V
reach status	REACH Unaffected
rise time	12 ns
rohs status	ROHS3 Compliant
simulation models	http://rohmfs.rohm.com/en/products/library/spice/d
subcategory	MOSFETs
supplier device package	TSMT3
technology	Si
transistor polarity	P-Channel
transistor type	1 P-Channel
typical turn-off delay time	40 ns
typical turn-on delay time	8 ns
vds - drain-source breakdown voltage	30 V
вес, г	0.01
vgs - gate-source voltage	20 V
vgs (max)	В±20V
vgs th - gate-source threshold voltage	2.5 V
vgs(th) (max) @ id	2.5V @ 1mA

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RQ5E035ATTCL