RQ3E100BNTB
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Semiconductors\Discrete Semiconductors\Transistors\MOSFETN-канал 30V 10A (Ta) 2W (Ta) Поверхностный монтаж 8-HSMT (3,2x3)
| Вес и габариты | |
| base product number | RQ3E100 -> |
| channel mode | Enhancement |
| configuration | Single |
| current - continuous drain (id) @ 25в°c | 10A (Ta) |
| drain to source voltage (vdss) | 30V |
| drive voltage (max rds on, min rds on) | 4.5V, 10V |
| eccn | EAR99 |
| factory pack quantity | 3000 |
| fall time | 10 ns |
| fet type | N-Channel |
| gate charge (qg) (max) @ vgs | 22nC @ 10V |
| htsus | 8541.29.0095 |
| id - continuous drain current | 13.5 A |
| input capacitance (ciss) (max) @ vds | 1100pF @ 15V |
| manufacturer | ROHM Semiconductor |
| maximum operating temperature | +150 C |
| minimum operating temperature | -55 C |
| moisture sensitivity level (msl) | 1 (Unlimited) |
| mounting style | SMD/SMT |
| mounting type | Surface Mount |
| number of channels | 1 Channel |
| operating temperature | 150В°C (TJ) |
| other related documents | http://rohmfs.rohm.com/en/techdata_basic/transisto |
| package | Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ® |
| package / case | HSMT-8 |
| packaging | Cut Tape or Reel |
| part # aliases | RQ3E100BN |
| pd - power dissipation | 15 W |
| power dissipation (max) | 2W (Ta) |
| product category | MOSFET |
| product type | MOSFET |
| qg - gate charge | 22 nC |
| rds on - drain-source resistance | 7.7 mOhms |
| rds on (max) @ id, vgs | 10.4mOhm @ 10A, 10V |
| reach status | REACH Unaffected |
| rise time | 28 ns |
| rohs status | ROHS3 Compliant |
| simulation models | http://rohmfs.rohm.com/en/products/library/spice/d |
| subcategory | MOSFETs |
| supplier device package | 8-HSMT (3.2x3) |
| technology | Si |
| transistor polarity | N-Channel |
| transistor type | 1 N-Channel |
| typical turn-off delay time | 44 ns |
| typical turn-on delay time | 10 ns |
| vds - drain-source breakdown voltage | 30 V |
| вес, г | 5.58 |
| vgs - gate-source voltage | 20 V |
| vgs (max) | В±20V |
| vgs th - gate-source threshold voltage | 1 V |
| vgs(th) (max) @ id | 2.5V @ 1mA |
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Компания ООО "Телеметрия"
- Название организации: ООО "ТЕЛЕМЕТРИЯ" Юридический адрес организации: Российская Федерация, 664043, Иркутская область, г. Иркутск, ул. Маршала Конева, дом 38 ИНН 7536172565 КПП 381201001 ОГРН 1187536004215 Расчетный счет 40702810010000426573 Банк АО «Тинькофф Банк» БИК банка 044525974 ИНН банка 7710140679 Корреспондентский счет банка 30101810145250000974 Юридический адрес банка 127287, г. Москва, ул. Хуторская 2-я, д. 38А, стр. 26