Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал 600V 24A (Tc) 245W (Tc) сквозное отверстие TO-247

Подробное описание

Вес и габариты
current - continuous drain (id) @ 25в°c	24A (Tc)
drain to source voltage (vdss)	600V
drive voltage (max rds on, min rds on)	10V

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Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал 600V 24A (Tc) 245W (Tc) сквозное отверстие TO-247

Вес и габариты
current - continuous drain (id) @ 25в°c	24A (Tc)
drain to source voltage (vdss)	600V
drive voltage (max rds on, min rds on)	10V
eccn	EAR99
fet type	N-Channel
gate charge (qg) (max) @ vgs	45nC @ 10V
htsus	8541.29.0095
input capacitance (ciss) (max) @ vds	2000pF @ 25V
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Through Hole
operating temperature	-55В°C ~ 150В°C (TJ)
other related documents	http://rohmfs.rohm.com/en/techdata_basic/transisto
package	Tube
package / case	TO-247-3
power dissipation (max)	245W (Tc)
rds on (max) @ id, vgs	165mOhm @ 11.3A, 10V
reach status	REACH Affected
rohs status	ROHS3 Compliant
simulation models	http://rohmfs.rohm.com/en/products/library/spice/d
supplier device package	TO-247
technology	MOSFET (Metal Oxide)
vgs (max)	В±20V
vgs(th) (max) @ id	5V @ 1mA

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