Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал 600V 20A (Ta) 50W (Tc) сквозное отверстие TO-220FM

Подробное описание

Вес и габариты
base product number	R6020 ->
current - continuous drain (id) @ 25в°c	20A (Ta)
drain to source voltage (vdss)	600V

2 320 ₽

– +

Бонус: 46.4 !

Бонусная программа

Итого: 2 320 ₽

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Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал 600V 20A (Ta) 50W (Tc) сквозное отверстие TO-220FM

Вес и габариты
base product number	R6020 ->
current - continuous drain (id) @ 25в°c	20A (Ta)
drain to source voltage (vdss)	600V
drive voltage (max rds on, min rds on)	10V
eccn	EAR99
fet type	N-Channel
gate charge (qg) (max) @ vgs	65nC @ 10V
htsus	8541.29.0095
input capacitance (ciss) (max) @ vds	2040pF @ 25V
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Through Hole
operating temperature	150В°C (TJ)
package	Bulk
package / case	TO-220-3 Full Pack
power dissipation (max)	50W (Tc)
rds on (max) @ id, vgs	220mOhm @ 10A, 10V
reach status	REACH Unaffected
rohs status	ROHS3 Compliant
supplier device package	TO-220FM
technology	MOSFET (Metal Oxide)
vgs (max)	В±30V
vgs(th) (max) @ id	4.5V @ 1mA

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Кнопки

R6020ANX