Name: R6004ENX, N-Channel MOSFET, 4 A, 600 V, 3-Pin TO-220FM R6004ENX
SKU: R6004ENX

N-канал 600V 4A (Tc) 40W (Tc) сквозное отверстие TO-220FM

Подробное описание

Вес и габариты
base product number	R6004 ->
current - continuous drain (id) @ 25в°c	4A (Tc)
drain to source voltage (vdss)	600V

320 ₽

– +

Бонус: 6.4 !

Бонусная программа

Итого: 320 ₽

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N-канал 600V 4A (Tc) 40W (Tc) сквозное отверстие TO-220FM

Вес и габариты
base product number	R6004 ->
current - continuous drain (id) @ 25в°c	4A (Tc)
drain to source voltage (vdss)	600V
drive voltage (max rds on, min rds on)	10V
eccn	EAR99
fet type	N-Channel
gate charge (qg) (max) @ vgs	15nC @ 10V
htsus	8541.29.0095
input capacitance (ciss) (max) @ vds	250pF @ 25V
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Through Hole
operating temperature	150В°C (TJ)
other related documents	http://rohmfs.rohm.com/en/techdata_basic/transisto
package	Bulk
package / case	TO-220-3 Full Pack
power dissipation (max)	40W (Tc)
rds on (max) @ id, vgs	980mOhm @ 1.5A, 10V
reach status	REACH Unaffected
rohs status	ROHS3 Compliant
simulation models	http://rohmfs.rohm.com/en/products/library/spice/d
supplier device package	TO-220FM
technology	MOSFET (Metal Oxide)
vgs (max)	В±20V
vgs(th) (max) @ id	4V @ 1mA

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