QS8K13TCR, MOSFET 4V Drive Nch+Nch MOSFET

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Артикул: QS8K13TCR
Semiconductors\Discrete Semiconductors\Transistors\MOSFETSilicon Power MOSFETsROHM Semiconductor Silicon Power MOSFETs feature ultra-fast switching speeds and low on-resistance. These MOSFETs are available in a wide lineup of packages, including the miniature 0604 size to save space in various designs.
Вес и габариты
channel mode:Enhancement
configuration:Dual
factory pack quantity: factory pack quantity:3000
420
+
Бонус: 8.4 !
Бонусная программа
Итого: 420
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Semiconductors\Discrete Semiconductors\Transistors\MOSFETSilicon Power MOSFETsROHM Semiconductor Silicon Power MOSFETs feature ultra-fast switching speeds and low on-resistance. These MOSFETs are available in a wide lineup of packages, including the miniature 0604 size to save space in various designs.
Вес и габариты
channel mode:Enhancement
configuration:Dual
factory pack quantity: factory pack quantity:3000
fall time:7 ns, 7 ns
forward transconductance - min:3 S, 3 S
id - continuous drain current:6 A
manufacturer:ROHM Semiconductor
maximum operating temperature:+150 C
minimum operating temperature:-55 C
mounting style:SMD/SMT
number of channels:2 Channel
package/case:TSMT-8
packaging:Reel, Cut Tape, MouseReel
part # aliases:QS8K13
pd - power dissipation:1.5 W
product category:MOSFET
product type:MOSFET
qg - gate charge:20 nC
rds on - drain-source resistance:20 mOhms, 20 mOhms
rise time:40 ns, 40 ns
subcategory:MOSFETs
technology:Si
transistor polarity:N-Channel
transistor type:2 N-Channel
typical turn-off delay time:35 ns, 35 ns
typical turn-on delay time:8 ns, 8 ns
vds - drain-source breakdown voltage:30 V
вес, г0.01
vgs - gate-source voltage:-20 V, +20 V
vgs th - gate-source threshold voltage:1 V
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