78 ₽

– +

Бонус: 1.56 !

Бонусная программа

Итого: 78 ₽

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Вес и габариты
channel mode	Enhancement
configuration	Dual
factory pack quantity	3000
fall time	7 ns, 22 ns
forward transconductance - min	4.4 S, 5.5 S
id - continuous drain current	9 A, 8 A
manufacturer	ROHM Semiconductor
maximum operating temperature	+150 C
minimum operating temperature	-55 C
mounting style	SMD/SMT
number of channels	2 Channel
package / case	TSMT-8
packaging	Cut Tape or Reel
part # aliases	QH8MA4
pd - power dissipation	2.6 W
product category	MOSFET
product type	MOSFET
qg - gate charge	15.5 nC, 19.6 nC
rds on - drain-source resistance	12.3 mOhms, 22 mOhms
rise time	19 ns, 16 ns
subcategory	MOSFETs
technology	Si
transistor polarity	N-Channel, P-Channel
transistor type	1 N-Channel, 1 P-Channel
typical turn-off delay time	33 ns, 55 ns
typical turn-on delay time	8 ns, 10 ns
vds - drain-source breakdown voltage	30 V
vgs - gate-source voltage	20 V
vgs th - gate-source threshold voltage	1 V, 2.5 V

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QH8MA4TCR