NVR4501NT1G, MOSFET NFET SOT23 20V 3.2A 80MO
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Артикул: NVR4501NT1G
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Semiconductors\Discrete Semiconductors\Transistors\MOSFETTrans MOSFET N-CH 20V 3.2A Automotive 3-Pin SOT-23 T/R
| Вес и габариты | |
| automotive | Yes |
| channel mode | Enhancement |
| channel mode: | Enhancement |
| channel type | N |
| configuration | Single |
| configuration: | Single |
| eccn (us) | EAR99 |
| eu rohs | Compliant |
| factory pack quantity: factory pack quantity: | 3000 |
| fall time: | 3 ns |
| forward transconductance - min: | 9 S |
| id - continuous drain current: | 3.2 A |
| lead shape | Gull-wing |
| manufacturer: | onsemi |
| maximum continuous drain current (a) | 3.2 |
| maximum continuous drain current on pcb @ tc=25°c (a) | 3.2 |
| maximum diode forward voltage (v) | 1.2 |
| maximum drain source resistance (mohm) | 80 4.5V |
| maximum drain source voltage (v) | 20 |
| maximum gate source leakage current (na) | 100 |
| maximum gate source voltage (v) | ±12 |
| maximum gate threshold voltage (v) | 1.2 |
| maximum idss (ua) | 1.5 |
| maximum junction ambient thermal resistance on pcb (°c/w) | 300 |
| maximum operating temperature: | +150 C |
| maximum operating temperature (°c) | 150 |
| maximum positive gate source voltage (v) | 12 |
| maximum power dissipation (mw) | 1250 |
| maximum power dissipation on pcb @ tc=25°c (w) | 1.25 |
| maximum pulsed drain current @ tc=25°c (a) | 10 |
| minimum gate threshold voltage (v) | 0.65 |
| minimum operating temperature: | -55 C |
| minimum operating temperature (°c) | -55 |
| mounting | Surface Mount |
| mounting style: | SMD/SMT |
| number of channels: | 1 Channel |
| number of elements per chip | 1 |
| operating junction temperature (°c) | -55 to 150 |
| package/case: | SOT-23-3 |
| packaging | Tape and Reel |
| packaging: | Reel, Cut Tape, MouseReel |
| part status | Active |
| pcb changed | 3 |
| pd - power dissipation: | 1.25 W |
| pin count | 3 |
| ppap | Yes |
| product category | Power MOSFET |
| product category: | MOSFET |
| product type: | MOSFET |
| qg - gate charge: | 2.4 nC |
| qualification: | AEC-Q101 |
| rds on - drain-source resistance: | 80 mOhms |
| rise time: | 12 ns |
| series: | NTR4501 |
| standard package name | SOT |
| subcategory: | MOSFETs |
| supplier package | SOT-23 |
| supplier temperature grade | Automotive |
| technology: | Si |
| transistor polarity: | N-Channel |
| transistor type: | 1 N-Channel |
| typical diode forward voltage (v) | 0.8 |
| typical fall time (ns) | 3 |
| typical gate charge @ vgs (nc) | 2.4 4.5V |
| typical gate plateau voltage (v) | 1.7 |
| typical gate to drain charge (nc) | 0.6 |
| typical gate to source charge (nc) | 0.5 |
| typical input capacitance @ vds (pf) | 200 10V |
| typical output capacitance (pf) | 80 |
| typical reverse recovery charge (nc) | 3 |
| typical reverse recovery time (ns) | 7.1 |
| typical reverse transfer capacitance @ vds (pf) | 50 10V |
| typical rise time (ns) | 12 |
| typical turn-off delay time: | 12 ns |
| typical turn-off delay time (ns) | 12 |
| typical turn-on delay time: | 6.5 ns |
| typical turn-on delay time (ns) | 6.5 |
| vds - drain-source breakdown voltage: | 20 V |
| вес, г | 0.01 |
| vgs - gate-source voltage: | -12 V, +12 V |
| vgs th - gate-source threshold voltage: | 650 mV |
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Компания ООО "Телеметрия"
- Название организации: ООО "ТЕЛЕМЕТРИЯ" Юридический адрес организации: Российская Федерация, 664043, Иркутская область, г. Иркутск, ул. Маршала Конева, дом 38 ИНН 7536172565 КПП 381201001 ОГРН 1187536004215 Расчетный счет 40702810010000426573 Банк АО «Тинькофф Банк» БИК банка 044525974 ИНН банка 7710140679 Корреспондентский счет банка 30101810145250000974 Юридический адрес банка 127287, г. Москва, ул. Хуторская 2-я, д. 38А, стр. 26