NVBG040N120SC1, MOSFET SIC MOS D2PAK-7L 40MOHM 1200V

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Артикул: NVBG040N120SC1
Semiconductors\Discrete Semiconductors\Transistors\MOSFET1200V SiC MOSFETsonsemi 1200V SiC MOSFETs feature completely new technology and provide superior switching performance and high reliability compared to silicon. These MOSFETs offer low on-resistance that ensures low capacitance and gate charge. The 1200V SiC MOSFETs provide system benefits and include high efficiency, fast operation frequency, increased power density, reduced EMI, and reduced system size. These MOSFETs feature blocking voltage,...
Вес и габариты
channel mode:Enhancement
factory pack quantity: factory pack quantity:800
id - continuous drain current:60 A
8 650
+
Бонус: 173 !
Бонусная программа
Итого: 8 650
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Semiconductors\Discrete Semiconductors\Transistors\MOSFET1200V SiC MOSFETsonsemi 1200V SiC MOSFETs feature completely new technology and provide superior switching performance and high reliability compared to silicon. These MOSFETs offer low on-resistance that ensures low capacitance and gate charge. The 1200V SiC MOSFETs provide system benefits and include high efficiency, fast operation frequency, increased power density, reduced EMI, and reduced system size. These MOSFETs feature blocking voltage, high-speed switching, low capacitance, and operate at -55°C to 175°C temperature range. The 1200V SiC MOSFETs are AEC-Q101 automotive qualified and are RoHS compliant. These MOSFETs are best suited for boost inverter, charging stations, DC-DC inverter, DC-DC converter, On-Board Charger (OBC), motor control, industrial power supply, and server power supply.
Вес и габариты
channel mode:Enhancement
factory pack quantity: factory pack quantity:800
id - continuous drain current:60 A
manufacturerON Semiconductor
manufacturer:onsemi
maximum operating temperature:+175 C
minimum operating temperature:-55 C
mounting style:SMD/SMT
number of channels:1 Channel
package/case:D2PAK-7
packagingTape и Reel(TR)
packaging:Reel, Cut Tape, MouseReel
pd - power dissipation:357 W
product category:MOSFET
product type:MOSFET
qg - gate charge:106 nC
rds on - drain-source resistance:56 mOhms
subcategory:MOSFETs
technology:SiC
transistor polarity:N-Channel
vds - drain-source breakdown voltage:1.2 kV
вес, г4.68
vgs - gate-source voltage:-15 V, +25 V
vgs th - gate-source threshold voltage:4.3 V
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