NTMFS5C670NLT1G — купить | ООО «Телеметрия»

Активные электронные компонентыкол-во в упаковке: 1, корпус: DFN5, АБ N-канальный силовой полевой МОП-транзистор, 60 В, ON Semiconductor

Подробное описание

600 ₽

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Бонус: 12 !

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Итого: 600 ₽

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Вес и габариты
category	Power MOSFET
channel mode	Enhancement
channel type	N
configuration	Single
dimensions	5.1 x 6.1 x 1.95mm
factory pack quantity	1500
fall time	4 ns
forward diode voltage	1.2V
forward transconductance	82s
forward transconductance - min	82 S
height	1.95mm
id - continuous drain current	71 A
length	5.1mm
manufacturer	ON Semiconductor
maximum continuous drain current	71 A
maximum drain source resistance	8.8 mΩ
maximum drain source voltage	60 V
maximum gate source voltage	-20 V, +20 V
maximum gate threshold voltage	2V
maximum operating temperature	+175 °C
maximum power dissipation	61 W
minimum operating temperature	-55 °C
mounting style	SMD/SMT
mounting type	Surface Mount
number of channels	1 Channel
number of elements per chip	1
package / case	SO-FL-8
package type	DFN
packaging	Cut Tape or Reel
pd - power dissipation	61 W
pin count	5
product category	MOSFET
product type	MOSFET
qg - gate charge	20 nC
rds on - drain-source resistance	8.8 mOhms
rise time	60 ns
subcategory	MOSFETs
technology	Si
transistor configuration	Single
transistor material	Si
transistor polarity	N-Channel
transistor type	1 N-Channel
typical gate charge @ vgs	20 nC @ 10 V, 9 nC @ 4.5 V
typical input capacitance @ vds	1400 pF @ 25 V
typical turn-off delay time	15 ns
typical turn-on delay time	11 ns
vds - drain-source breakdown voltage	60 V
вес, г	0.166
vgs - gate-source voltage	20 V
vgs th - gate-source threshold voltage	1.2 V
width	6.1mm

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