NTD3055-094T4G
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Транзисторы / Полевые транзисторы / Одиночные MOSFET транзисторыкорпус: D-Pak (TO-252AA), инфо: Транзистор полевой N-канальный 60В 12АTrans MOSFET N-CH 60V 12A 3-Pin(2+Tab) DPAK T/R
| Вес и габариты | |
| automotive | No |
| channel mode | Enhancement |
| channel type | N |
| configuration | Single |
| eccn (us) | EAR99 |
| eu rohs | Compliant with Exemption |
| lead shape | Gull-wing |
| maximum continuous drain current | 12 A |
| maximum continuous drain current (a) | 12 |
| maximum diode forward voltage (v) | 1.15 |
| maximum drain source resistance | 94 mΩ |
| maximum drain source resistance (mohm) | 94 10V |
| maximum drain source voltage | 60 V |
| maximum drain source voltage (v) | 60 |
| maximum gate source leakage current (na) | 100 |
| maximum gate source voltage | -20 V, +20 V |
| maximum gate source voltage (v) | ±20 |
| maximum gate threshold voltage | 4V |
| maximum gate threshold voltage (v) | 4 |
| maximum idss (ua) | 1 |
| maximum junction ambient thermal resistance on pcb (°c/w) | 100 |
| maximum operating temperature | +175 C |
| maximum operating temperature (°c) | 175 |
| maximum positive gate source voltage (v) | 20 |
| maximum power dissipation | 48 W |
| maximum power dissipation (mw) | 48000 |
| maximum power dissipation on pcb @ tc=25°c (w) | 2.1 |
| maximum pulsed drain current @ tc=25°c (a) | 45 |
| minimum gate threshold voltage (v) | 2 |
| minimum operating temperature | -55 C |
| minimum operating temperature (°c) | -55 |
| mounting | Surface Mount |
| mounting type | Surface Mount |
| number of elements per chip | 1 |
| operating junction temperature (°c) | -55 to 175 |
| package type | DPAK(TO-252) |
| packaging | Tape and Reel |
| part status | Active |
| pcb changed | 2 |
| pin count | 3 |
| ppap | No |
| product category | Power MOSFET |
| standard package name | TO-252 |
| supplier package | DPAK |
| tab | Tab |
| transistor configuration | Single |
| transistor material | Si |
| typical diode forward voltage (v) | 0.94 |
| typical fall time (ns) | 23.9 |
| typical gate charge @ 10v (nc) | 10.9 |
| typical gate charge @ vgs | 10.9 nC 10 V |
| typical gate charge @ vgs (nc) | 10.9 10V |
| typical gate plateau voltage (v) | 6 |
| typical gate threshold voltage (v) | 2.9 |
| typical input capacitance @ vds (pf) | 323 25V |
| typical output capacitance (pf) | 107 |
| typical reverse recovery charge (nc) | 47 |
| typical reverse recovery time (ns) | 33.1 |
| typical reverse transfer capacitance @ vds (pf) | 34 25V |
| typical rise time (ns) | 32.3 |
| typical turn-off delay time (ns) | 25.2 |
| typical turn-on delay time (ns) | 7.7 |
| вес, г | 0.66 |
| width | 6.22mm |
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Компания ООО "Телеметрия"
- Название организации: ООО "ТЕЛЕМЕТРИЯ" Юридический адрес организации: Российская Федерация, 664043, Иркутская область, г. Иркутск, ул. Маршала Конева, дом 38 ИНН 7536172565 КПП 381201001 ОГРН 1187536004215 Расчетный счет 40702810010000426573 Банк АО «Тинькофф Банк» БИК банка 044525974 ИНН банка 7710140679 Корреспондентский счет банка 30101810145250000974 Юридический адрес банка 127287, г. Москва, ул. Хуторская 2-я, д. 38А, стр. 26