Вес и габариты | |
channel mode | Enhancement |
channel type | N |
maximum continuous drain current | 24 A |
maximum drain source resistance | 45 mΩ |
maximum drain source voltage | 60 V |
maximum gate source voltage | -15 V, +15 V |
maximum gate threshold voltage | 2V |
maximum operating temperature | +175 C |
maximum power dissipation | 62.5 W |
minimum operating temperature | -55 C |
mounting type | Surface Mount |
number of elements per chip | 1 |
package type | DPAK(TO-252) |
pin count | 3 |
transistor configuration | Single |
transistor material | Si |
typical gate charge @ vgs | 16 nC 5 V |
width | 6.22mm |