| Вес и габариты | |
| channel mode | Enhancement |
| channel type | N |
| maximum continuous drain current | 24 A |
| maximum drain source resistance | 45 mΩ |
| maximum drain source voltage | 60 V |
| maximum gate source voltage | -15 V, +15 V |
| maximum gate threshold voltage | 2V |
| maximum operating temperature | +175 C |
| maximum power dissipation | 62.5 W |
| minimum operating temperature | -55 C |
| mounting type | Surface Mount |
| number of elements per chip | 1 |
| package type | DPAK(TO-252) |
| pin count | 3 |
| transistor configuration | Single |
| transistor material | Si |
| typical gate charge @ vgs | 16 nC 5 V |
| width | 6.22mm |