Вес и габариты | |
automotive | No |
channel mode | Enhancement |
channel type | P Channel |
configuration | Single |
drain source on state resistance | 0.07Ом |
eccn (us) | EAR99 |
eu rohs | Compliant with Exemption |
количество выводов | 3вывод(-ов) |
lead shape | Gull-wing |
максимальная рабочая температура | 175 C |
maximum continuous drain current (a) | 27.5 |
maximum diode forward voltage (v) | 2.5 |
maximum drain source resistance (mohm) | 82 10V |
maximum drain source voltage (v) | 60 |
maximum gate source leakage current (na) | 100 |
maximum gate source voltage (v) | ±15 |
maximum gate threshold voltage (v) | 4 |
maximum idss (ua) | 10 |
maximum junction ambient thermal resistance on pcb (°c/w) | 63.2 |
maximum operating temperature (°c) | 175 |
maximum positive gate source voltage (v) | 15 |
maximum power dissipation (mw) | 120000 |
maximum pulsed drain current @ tc=25°c (a) | 80 |
minimum gate threshold voltage (v) | 2 |
minimum operating temperature (°c) | -55 |
монтаж транзистора | Surface Mount |
mounting | Surface Mount |
напряжение истока-стока vds | 60В |
напряжение измерения rds(on) | 10В |
непрерывный ток стока | 27.5А |
number of elements per chip | 1 |
operating junction temperature (°c) | -55 to 175 |
packaging | Tape and Reel |
part status | Active |
pcb changed | 2 |
pin count | 3 |
полярность транзистора | P Канал |
пороговое напряжение vgs | 2.8В |
power dissipation | 120Вт |
ppap | No |
product category | Power MOSFET |
рассеиваемая мощность | 120Вт |
сопротивление во включенном состоянии rds(on) | 0.07Ом |
standard package name | TO-263 |
стиль корпуса транзистора | TO-263(D2PAK) |
supplier package | D2PAK |
tab | Tab |
typical diode forward voltage (v) | 1.8 |
typical fall time (ns) | 190 |
typical gate charge @ 10v (nc) | 33 |
typical gate charge @ vgs (nc) | 33 10V |
typical gate plateau voltage (v) | 6 |
typical gate threshold voltage (v) | 2.8 |
typical input capacitance @ vds (pf) | 1200 25V |
typical output capacitance (pf) | 345 |
typical reverse recovery charge (nc) | 200 |
typical reverse recovery time (ns) | 70 |
typical reverse transfer capacitance @ vds (pf) | 90 25V |
typical rise time (ns) | 72 |
typical turn-off delay time (ns) | 43 |
typical turn-on delay time (ns) | 14 |
уровень чувствительности к влажности (msl) | MSL 1-Безлимитный |
вес, г | 1.96 |