| Вес и габариты | |
| automotive | No |
| channel mode | Enhancement |
| channel type | P Channel |
| configuration | Single |
| drain source on state resistance | 0.07Ом |
| eccn (us) | ear99 |
| eu rohs | Compliant with Exemption |
| количество выводов | 3вывод(-ов) |
| lead shape | Gull-wing |
| максимальная рабочая температура | 175 C |
| maximum continuous drain current (a) | 27.5 |
| maximum diode forward voltage (v) | 2.5 |
| maximum drain source resistance (mohm) | 82 10V |
| maximum drain source voltage (v) | 60 |
| maximum gate source leakage current (na) | 100 |
| maximum gate source voltage (v) | ±15 |
| maximum gate threshold voltage (v) | 4 |
| maximum idss (ua) | 10 |
| maximum junction ambient thermal resistance on pcb (°c/w) | 63.2 |
| maximum operating temperature (°c) | 175 |
| maximum positive gate source voltage (v) | 15 |
| maximum power dissipation (mw) | 120000 |
| maximum pulsed drain current @ tc=25°c (a) | 80 |
| minimum gate threshold voltage (v) | 2 |
| minimum operating temperature (°c) | -55 |
| монтаж транзистора | Surface Mount |
| mounting | surface mount |
| напряжение истока-стока vds | 60В |
| напряжение измерения rds(on) | 10В |
| непрерывный ток стока | 27.5А |
| number of elements per chip | 1 |
| operating junction temperature (°c) | -55 to 175 |
| packaging | Tape and Reel |
| part status | active |
| pcb changed | 2 |
| pin count | 3 |
| полярность транзистора | P Канал |
| пороговое напряжение vgs | 2.8В |
| power dissipation | 120Вт |
| ppap | No |
| product category | Power MOSFET |
| рассеиваемая мощность | 120Вт |
| сопротивление во включенном состоянии rds(on) | 0.07Ом |
| standard package name | TO-263 |
| стиль корпуса транзистора | TO-263(D2PAK) |
| supplier package | D2PAK |
| tab | Tab |
| typical diode forward voltage (v) | 1.8 |
| typical fall time (ns) | 190 |
| typical gate charge @ 10v (nc) | 33 |
| typical gate charge @ vgs (nc) | 33 10V |
| typical gate plateau voltage (v) | 6 |
| typical gate threshold voltage (v) | 2.8 |
| typical input capacitance @ vds (pf) | 1200 25V |
| typical output capacitance (pf) | 345 |
| typical reverse recovery charge (nc) | 200 |
| typical reverse recovery time (ns) | 70 |
| typical reverse transfer capacitance @ vds (pf) | 90 25V |
| typical rise time (ns) | 72 |
| typical turn-off delay time (ns) | 43 |
| typical turn-on delay time (ns) | 14 |
| уровень чувствительности к влажности (msl) | MSL 1-Безлимитный |
| вес, г | 1.96 |
