Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал 1200V 37A (Tc) 200W (Tc) сквозное отверстие TO-247-3

Подробное описание

Вес и габариты
base product number	MSC080 ->
current - continuous drain (id) @ 25в°c	37A (Tc)
drain to source voltage (vdss)	1200V

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Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал 1200V 37A (Tc) 200W (Tc) сквозное отверстие TO-247-3

Вес и габариты
base product number	MSC080 ->
current - continuous drain (id) @ 25в°c	37A (Tc)
drain to source voltage (vdss)	1200V
drive voltage (max rds on, min rds on)	20V
eccn	EAR99
fet type	N-Channel
gate charge (qg) (max) @ vgs	64nC @ 20V
htsus	8541.29.0095
input capacitance (ciss) (max) @ vds	838pF @ 1000V
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Through Hole
operating temperature	-55В°C ~ 175В°C (TJ)
package	Tube
package / case	TO-247-3
power dissipation (max)	200W (Tc)
rds on (max) @ id, vgs	100mOhm @ 15A, 20V
rohs status	RoHS Compliant
supplier device package	TO-247-3
technology	SiCFET (Silicon Carbide)
vgs (max)	+23V, -10V
vgs(th) (max) @ id	2.8V @ 1mA

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MSC080SMA120B