Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал 700V 77A (Tc) 283W (Tc) сквозное отверстие TO-247-4

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Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал 700V 77A (Tc) 283W (Tc) сквозное отверстие TO-247-4

Вес и габариты
base product number	MSC035 ->
channel mode:	Enhancement
configuration:	Single
current - continuous drain (id) @ 25в°c	77A (Tc)
drain to source voltage (vdss)	700V
drive voltage (max rds on, min rds on)	20V
eccn	EAR99
factory pack quantity: factory pack quantity:	1
fall time:	52 ns
fet type	N-Channel
gate charge (qg) (max) @ vgs	99nC @ 20V
htsus	8541.29.0095
id - continuous drain current:	77 A
input capacitance (ciss) (max) @ vds	2010pF @ 700V
manufacturer:	Microchip
maximum operating temperature:	+175 C
minimum operating temperature:	-55 C
moisture sensitivity level (msl)	1 (Unlimited)
mounting style:	Through Hole
mounting type	Through Hole
number of channels:	1 Channel
operating temperature	-55В°C ~ 175В°C (TJ)
package	Tube
package / case	TO-247-4
package/case:	TO-247-4
packaging:	Tube
pd - power dissipation:	283 W
power dissipation (max)	283W (Tc)
product category:	MOSFET
product type:	MOSFET
qg - gate charge:	99 nC
rds on - drain-source resistance:	44 mOhms
rds on (max) @ id, vgs	44mOhm @ 30A, 20V
rise time:	9 ns
subcategory:	MOSFETs
supplier device package	TO-247-4
technology	SiC (Silicon Carbide Junction Transistor)
technology:	SiC
transistor polarity:	N-Channel
transistor type:	1 N-Channel
typical turn-off delay time:	40 ns
typical turn-on delay time:	10 ns
vds - drain-source breakdown voltage:	700 V
vgs - gate-source voltage:	-10 V, +23 V
vgs (max)	+23V, -10V
vgs th - gate-source threshold voltage:	1.9 V
vgs(th) (max) @ id	2.7V @ 2mA

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Кнопки

MSC035SMA070B4