Semiconductors\Discrete Semiconductors\Transistors\MOSFETSilicon Carbide (SiC) Schottky Barrier DiodesMicrochip Technology Silicon Carbide (SiC) Schottky Barrier Diodes (SBD) offer dynamic and thermal performance over conventional Silicon (Si) power diodes. SiC devices offer a much greater dielectric breakdown field strength, higher bandgap, and higher thermal conductivity compared to Silicon-only devices. SiC SBDs feature zero forward and reverse recovery charges, reducing diode switching losses. These...

Подробное описание

Вес и габариты
base product number	MSC035 ->
channel mode:	Enhancement
configuration:	Single

Все характеристики

3 690 ₽

– +

Бонус: 73.8 !

Бонусная программа

Итого: 3 690 ₽

Купить

Обзор
Характеристики
Отзывы (0)
Реквизиты

Вес и габариты
base product number	MSC035 ->
channel mode:	Enhancement
configuration:	Single
current - continuous drain (id) @ 25в°c	77A (Tc)
drain to source voltage (vdss)	700V
drive voltage (max rds on, min rds on)	20V
eccn	EAR99
factory pack quantity: factory pack quantity:	1
fall time:	52 ns
fet type	N-Channel
gate charge (qg) (max) @ vgs	99nC @ 20V
htsus	8541.29.0095
id - continuous drain current:	77 A
input capacitance (ciss) (max) @ vds	2010pF @ 700V
manufacturer:	Microchip
maximum operating temperature:	+175 C
minimum operating temperature:	-55 C
moisture sensitivity level (msl)	1 (Unlimited)
mounting style:	Through Hole
mounting type	Through Hole
number of channels:	1 Channel
operating temperature	-55В°C ~ 175В°C (TJ)
package	Tube
package / case	TO-247-4
package/case:	TO-247-4
packaging:	Tube
pd - power dissipation:	283 W
power dissipation (max)	283W (Tc)
product category:	MOSFET
product type:	MOSFET
qg - gate charge:	99 nC
rds on - drain-source resistance:	44 mOhms
rds on (max) @ id, vgs	44mOhm @ 30A, 20V
rise time:	9 ns
subcategory:	MOSFETs
supplier device package	TO-247-4
technology	SiC (Silicon Carbide Junction Transistor)
technology:	SiC
transistor polarity:	N-Channel
transistor type:	1 N-Channel
typical turn-off delay time:	40 ns
typical turn-on delay time:	10 ns
vds - drain-source breakdown voltage:	700 V
вес, г	6
vgs - gate-source voltage:	-10 V, +23 V
vgs (max)	+23V, -10V
vgs th - gate-source threshold voltage:	1.9 V
vgs(th) (max) @ id	2.7V @ 2mA

Отзывов нет

Название организации: ООО "ТЕЛЕМЕТРИЯ"
Юридический адрес организации: Российская Федерация, 664043, Иркутская область, г. Иркутск, ул. Маршала Конева, дом 38
ИНН 7536172565
КПП 381201001
ОГРН 1187536004215
Расчетный счет 40702810010000426573
Банк АО «Тинькофф Банк»
БИК банка 044525974
ИНН банка 7710140679
Корреспондентский счет банка 30101810145250000974
Юридический адрес банка 127287, г. Москва, ул. Хуторская 2-я, д. 38А, стр. 26

Кнопки

MSC035SMA070B4, MOSFET MOSFET SIC 700 V 35 mOhm TO-247-4