Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-Channel 1.2kV 77A (Tc) 278W (Tc) Chassis Mount SOT-227 (ISOTOPВ®)

Подробное описание

Вес и габариты
base product number	MSC025 ->
current - continuous drain (id) @ 25в°c	77A (Tc)
drain to source voltage (vdss)	1.2kV

12 830 ₽

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Итого: 12 830 ₽

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Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-Channel 1.2kV 77A (Tc) 278W (Tc) Chassis Mount SOT-227 (ISOTOPВ®)

Вес и габариты
base product number	MSC025 ->
current - continuous drain (id) @ 25в°c	77A (Tc)
drain to source voltage (vdss)	1.2kV
drive voltage (max rds on, min rds on)	20V
eccn	EAR99
fet type	N-Channel
gate charge (qg) (max) @ vgs	232nC @ 20V
htsus	8541.29.0095
input capacitance (ciss) (max) @ vds	3020pF @ 1000V
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Chassis Mount
operating temperature	-55В°C ~ 175В°C (TJ)
package	Tube
package / case	SOT-227-4, miniBLOC
power dissipation (max)	278W (Tc)
rds on (max) @ id, vgs	31mOhm @ 40A, 20V
rohs status	RoHS Compliant
supplier device package	SOT-227 (ISOTOPВ®)
technology	SiCFET (Silicon Carbide)
vgs (max)	+25V, -10V
vgs(th) (max) @ id	2.8V @ 1mA

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MSC025SMA120J