LP0701N3-G, Силовой МОП-транзистор, P Channel, 16.5 В, 500 мА, 1.3 Ом, TO-92, Through Hole

Полупроводники - Дискретные\МОП-транзисторы\Одиночные МОП-транзисторыThis enhancement-mode (normally-off) transistor utilises a lateral MOS structure and Supertex's well-proven silicongate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistor and with the high input impedance and negative temperature coefficient inherent in MOS devices.
• Suitable for logic level interfaces, solid state relays, battery operated systems, photo voltaic drives, analogue switches etc.• Ultra-low threshold• High input impedance• Low input capacitance• Fast switching speeds• Low on-resistance• Freedom from secondary breakdown• Low input and output leakage