LET20030C, Trans RF MOSFET N-CH 80V 9A 3-Pin Case M-243 Loose

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Артикул: LET20030C
RF Mosfet LDMOS 28V 400mA 2GHz 13.9dB 45W M243
Основные
moisture sensitivity level (msl)1 (Unlimited)
packageBox
package / caseM243
rohs statusROHS3 Compliant
12 970
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RF Mosfet LDMOS 28V 400mA 2GHz 13.9dB 45W M243
Основные
moisture sensitivity level (msl)1 (Unlimited)
packageBox
package / caseM243
rohs statusROHS3 Compliant
eccnEAR99
htsus8541.29.0095
supplier device packageM243
pin count3
packagingLoose
automotiveNo
eu rohsCompliant
maximum operating temperature (°c)200
mountingScrew
part statusObsolete
pcb changed3
supplier packageCase M-243
base product numberLET20030 ->
eccn (us)EAR99
maximum power dissipation (mw)108000
minimum operating temperature (°c)-65
configurationSingle
hts8541.29.00.95
package height4.45(Max)
package length20.57(Max)
package width6.1(Max)
process technologyLDMOS
Вес и габариты
number of elements per chip1
frequency2GHz
gain13.9dB
channel typeN
maximum frequency (mhz)2000
other related documentshttp://www.st.com/web/catalog/sense_power/FM1987/C
mode of operationIS-97 CDMA
voltage - rated80V
current rating (amps)9A
current - test400mA
channel modeEnhancement
maximum continuous drain current (a)9
maximum drain source voltage (v)80
maximum gate source voltage (v)15
typical input capacitance @ vds (pf)58@28V
militaryNo
transistor typeLDMOS
output power (w)45(Typ)
power - output45W
typical power gain (db)13.9
voltage - test28V
typical reverse transfer capacitance @ vds (pf)0.8@28V
typical output capacitance @ vds (pf)29@28V
typical forward transconductance (s)2.5(Min)
typical drain efficiency (%)50
maximum vswr10(Min)
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