Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleP-Channel 100V 210A (Tc) 1040W (Tc) Through Hole PLUS247в„ў-3

Подробное описание

Вес и габариты
california prop 65	Warning Information
current - continuous drain (id) @ 25в°c	210A (Tc)
drain to source voltage (vdss)	100V

7 230 ₽

– +

Бонус: 144.6 !

Бонусная программа

Итого: 7 230 ₽

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Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleP-Channel 100V 210A (Tc) 1040W (Tc) Through Hole PLUS247в„ў-3

Вес и габариты
california prop 65	Warning Information
current - continuous drain (id) @ 25в°c	210A (Tc)
drain to source voltage (vdss)	100V
drive voltage (max rds on, min rds on)	10V
eccn	EAR99
fet type	P-Channel
gate charge (qg) (max) @ vgs	740nC @ 10V
htsus	8541.29.0095
input capacitance (ciss) (max) @ vds	69500pF @ 25V
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Through Hole
operating temperature	-55В°C ~ 150В°C (TJ)
package	Tube
package / case	TO-247-3
power dissipation (max)	1040W (Tc)
rds on (max) @ id, vgs	7.5mOhm @ 105A, 10V
reach status	REACH Unaffected
rohs status	ROHS3 Compliant
series	TrenchPв„ў ->
supplier device package	PLUS247в„ў-3
technology	MOSFET (Metal Oxide)
vgs (max)	В±15V
vgs(th) (max) @ id	4.5V @ 250ВµA

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Кнопки

IXTX210P10T