Name: IXTQ50N20P, Силовой МОП-транзистор, N Канал, 200 В, 50 А, 0.06 Ом, TO-3P, Through Hole
SKU: IXTQ50N20P

N-канал 200V 50A (Tc) 360W (Tc) сквозное отверстие TO-3P

Подробное описание

Вес и габариты
california prop 65	Warning Information
current - continuous drain (id) @ 25в°c	50A (Tc)
drain to source voltage (vdss)	200V

1 100 ₽

– +

Бонус: 22 !

Бонусная программа

Итого: 1 100 ₽

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N-канал 200V 50A (Tc) 360W (Tc) сквозное отверстие TO-3P

Вес и габариты
california prop 65	Warning Information
current - continuous drain (id) @ 25в°c	50A (Tc)
drain to source voltage (vdss)	200V
drive voltage (max rds on, min rds on)	10V
eccn	EAR99
fet type	N-Channel
gate charge (qg) (max) @ vgs	70nC @ 10V
htsus	8541.29.0095
input capacitance (ciss) (max) @ vds	2720pF @ 25V
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Through Hole
operating temperature	-55В°C ~ 175В°C (TJ)
package	Tube
package / case	TO-3P-3, SC-65-3
power dissipation (max)	360W (Tc)
rds on (max) @ id, vgs	60mOhm @ 50A, 10V
reach status	REACH Unaffected
rohs status	ROHS3 Compliant
series	PolarHTв„ў ->
supplier device package	TO-3P
technology	MOSFET (Metal Oxide)
вес, г	4
vgs (max)	В±20V
vgs(th) (max) @ id	5V @ 250ВµA

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