Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал 100V 130A (Tc) 360W (Tc) сквозное отверстие TO-3P

Подробное описание

Вес и габариты
california prop 65	Warning Information
continuous drain current (id) @ 25в°c	130A(Tc)
current - continuous drain (id) @ 25в°c	130A (Tc)

1 360 ₽

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Бонус: 27.2 !

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Итого: 1 360 ₽

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Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал 100V 130A (Tc) 360W (Tc) сквозное отверстие TO-3P

Вес и габариты
california prop 65	Warning Information
continuous drain current (id) @ 25в°c	130A(Tc)
current - continuous drain (id) @ 25в°c	130A (Tc)
drain to source voltage (vdss)	100V
drive voltage (max rds on, min rds on)	10V
eccn	EAR99
fet type	N-Channel
gate charge (qg) (max) @ vgs	104nC @ 10V
htsus	8541.29.0095
input capacitance (ciss) (max) @ vds	5080pF @ 25V
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Through Hole
operating temperature	-55В°C ~ 175В°C (TJ)
package	Tube
package / case	TO-3P-3, SC-65-3
power dissipation (max)	360W (Tc)
power dissipation-max (ta=25в°c)	360W(Tc)
rds on - drain-source resistance	9.1mО© @ 25A,10V
rds on (max) @ id, vgs	9.1mOhm @ 25A, 10V
reach status	REACH Unaffected
rohs status	ROHS3 Compliant
series	TrenchMVв„ў ->
supplier device package	TO-3P
technology	MOSFET (Metal Oxide)
transistor polarity	N Channel
vds - drain-source breakdown voltage	100V
vgs - gate-source voltage	4.5V @ 250uA
vgs (max)	В±20V
vgs(th) (max) @ id	4.5V @ 250ВµA

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IXTQ130N10T