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Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал 150V 90A (Tc) 455W (Tc) сквозное отверстие TO-220AB

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Вес и габариты
california prop 65	Warning Information
current - continuous drain (id) @ 25в°c	90A (Tc)
drain to source voltage (vdss)	150V

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Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал 150V 90A (Tc) 455W (Tc) сквозное отверстие TO-220AB

Вес и габариты
california prop 65	Warning Information
current - continuous drain (id) @ 25в°c	90A (Tc)
drain to source voltage (vdss)	150V
drive voltage (max rds on, min rds on)	10V
eccn	EAR99
fet type	N-Channel
gate charge (qg) (max) @ vgs	80nC @ 10V
htsus	8541.29.0095
input capacitance (ciss) (max) @ vds	4100pF @ 25V
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Through Hole
operating temperature	-55В°C ~ 175В°C (TJ)
package	Tube
package / case	TO-220-3
power dissipation (max)	455W (Tc)
rds on (max) @ id, vgs	20mOhm @ 45A, 10V
reach status	REACH Unaffected
rohs status	ROHS3 Compliant
supplier device package	TO-220AB
technology	MOSFET (Metal Oxide)
vgs (max)	В±30V
vgs(th) (max) @ id	4.5V @ 1mA

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