Name: IXTP4N65X2, N-Channel MOSFET, 4 A, 650 V, 3-Pin TO-220 IXTP4N65X2
SKU: IXTP4N65X2

N-канал 650V 4A (Tc) 80W (Tc) сквозное отверстие TO-220

Подробное описание

Вес и габариты
california prop 65	Warning Information
current - continuous drain (id) @ 25в°c	4A (Tc)
drain to source voltage (vdss)	650V

420 ₽

– +

Бонус: 8.4 !

Бонусная программа

Итого: 420 ₽

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N-канал 650V 4A (Tc) 80W (Tc) сквозное отверстие TO-220

Вес и габариты
california prop 65	Warning Information
current - continuous drain (id) @ 25в°c	4A (Tc)
drain to source voltage (vdss)	650V
drive voltage (max rds on, min rds on)	10V
eccn	EAR99
fet type	N-Channel
gate charge (qg) (max) @ vgs	8.3nC @ 10V
htsus	8541.29.0095
input capacitance (ciss) (max) @ vds	455pF @ 25V
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Through Hole
operating temperature	-55В°C ~ 150В°C (TJ)
package	Tube
package / case	TO-220-3
power dissipation (max)	80W (Tc)
rds on (max) @ id, vgs	850mOhm @ 2A, 10V
reach status	REACH Unaffected
rohs status	ROHS3 Compliant
supplier device package	TO-220
technology	MOSFET (Metal Oxide)
vgs (max)	В±30V
vgs(th) (max) @ id	5V @ 250ВµA

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