| Вес и габариты | |
| channel mode: | Enhancement |
| configuration: | Single |
| factory pack quantity: factory pack quantity: | 50 |
| fall time: | 21 ns |
| id - continuous drain current: | 120 A |
| manufacturer: | IXYS |
| maximum operating temperature: | +150 C |
| minimum operating temperature: | -55 C |
| mounting style: | Through Hole |
| number of channels: | 1 Channel |
| package/case: | TO-220-3 |
| packaging: | Tube |
| pd - power dissipation: | 298 W |
| product category: | MOSFET |
| product type: | MOSFET |
| qg - gate charge: | 185 nC |
| rds on - drain-source resistance: | 10 mOhms |
| rise time: | 28 ns |
| series: | IXTP120P065 |
| subcategory: | MOSFETs |
| technology: | Si |
| tradename: | TrenchP |
| transistor polarity: | P-Channel |
| transistor type: | 1 P-Channel |
| typical turn-off delay time: | 38 ns |
| typical turn-on delay time: | 31 ns |
| vds - drain-source breakdown voltage: | 65 V |
| вес, г | 4 |
| vgs - gate-source voltage: | -15 V, +15 V |
| vgs th - gate-source threshold voltage: | 4 V |