Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал 40 В 660A (Tc) 1040 Вт (Tc) Монтаж на шасси SOT-227B

Подробное описание

Вес и габариты
california prop 65	Warning Information
current - continuous drain (id) @ 25в°c	660A (Tc)
drain to source voltage (vdss)	40V

7 370 ₽

– +

Бонус: 147.4 !

Бонусная программа

Итого: 7 370 ₽

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Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал 40 В 660A (Tc) 1040 Вт (Tc) Монтаж на шасси SOT-227B

Вес и габариты
california prop 65	Warning Information
current - continuous drain (id) @ 25в°c	660A (Tc)
drain to source voltage (vdss)	40V
drive voltage (max rds on, min rds on)	10V
eccn	EAR99
fet feature	Current Sensing
fet type	N-Channel
gate charge (qg) (max) @ vgs	860nC @ 10V
htsus	8541.29.0095
input capacitance (ciss) (max) @ vds	44000pF @ 25V
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Chassis Mount
operating temperature	-55В°C ~ 175В°C (TJ)
package	Tube
package / case	SOT-227-4, miniBLOC
power dissipation (max)	1040W (Tc)
rds on (max) @ id, vgs	0.85mOhm @ 100A, 10V
reach status	REACH Unaffected
rohs status	ROHS3 Compliant
series	TrenchT4в„ў ->
supplier device package	SOT-227B
technology	MOSFET (Metal Oxide)
vgs (max)	В±15V
vgs(th) (max) @ id	4V @ 250ВµA

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IXTN660N04T4