Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleP-канал 500V 7A (Tc) 180W (Tc) сквозное отверстие TO-247 (IXTH)

Подробное описание

Вес и габариты
california prop 65	Warning Information
current - continuous drain (id) @ 25в°c	7A (Tc)
drain to source voltage (vdss)	500V

5 020 ₽

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Бонус: 100.4 !

Бонусная программа

Итого: 5 020 ₽

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Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleP-канал 500V 7A (Tc) 180W (Tc) сквозное отверстие TO-247 (IXTH)

Вес и габариты
california prop 65	Warning Information
current - continuous drain (id) @ 25в°c	7A (Tc)
drain to source voltage (vdss)	500V
drive voltage (max rds on, min rds on)	10V
eccn	EAR99
fet type	P-Channel
gate charge (qg) (max) @ vgs	130nC @ 10V
htsus	8541.29.0095
input capacitance (ciss) (max) @ vds	3400pF @ 25V
moisture sensitivity level (msl)	Not Applicable
mounting type	Through Hole
operating temperature	-55В°C ~ 150В°C (TJ)
package	Tube
package / case	TO-247-3
power dissipation (max)	180W (Tc)
rds on (max) @ id, vgs	1.5Ohm @ 500mA, 10V
reach status	REACH Unaffected
rohs status	ROHS3 Compliant
supplier device package	TO-247 (IXTH)
technology	MOSFET (Metal Oxide)
vgs (max)	В±20V
vgs(th) (max) @ id	5V @ 250ВµA

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